本文报道了一种用于囚禁铍离子量子计算机的低温BiCMOS系统级芯片(SoC)，该芯片支持0.7-1.6 GHz微波信号生成，覆盖9Be+量子计算实现中的所有微波跃迁。研究人员通过集成48-kbit波形存储器和单边带混频架构，在4K环境下实现了高达94%的SPAM校正前振荡幅度和172 kHz的拉 ...

本刊推荐：为解决G波段毫米波通信系统对宽带、高输出功率放大器的需求，研究人员开展基于130 nm SiGe BiCMOS工艺的宽带功率放大器(PA)研究。通过提出新型共基极晶体管基极电感增益峰值技术，实现140-238.7 GHz工作带宽，测得峰值增益27.6 dB、饱和输出功率(Psat)8.5 ...

COLORADO SPRINGS, Colo. — Atmel Corp. will emphasize silicon germanium on BiCMOS — with specialized RF CMOS processes spun from the SiGe/BiCMOS as a fringe benefit — to realize power and cost ...

ATLANTA, Georgia, June 17, 2008 – Jazz Semiconductor, the leader in Analog-Intensive Mixed-Signal (AIMS) foundry solutions today announced its 0.18-micron Silicon Germanium (SiGe) BiCMOS platform ...

Scientists from imec’s IDLab demonstrated a 120-Gbaud transmitter IC that implements a SiGe BiCMOS multiplexer, equalizer, and driver. The architecture significantly increases baud rate and has a high ...

Taiwan Semiconductor Manufacturing Company (TSMC) announced on March 1 the availability of 0.35-micron BiCMOS (bipolar-complementary metal oxide semiconductor) process technology to its customers.