静电放电（ESD - ElectroStatic Discharge）会给电子器件带来破坏性的后果，是造成集成电路失效的主要原因之一。随着集成电路工艺不断发展，CMOS电路的尺寸不断缩小，管子的栅氧厚度越来越薄，芯片的面积规模越来越大，MOS管能承受的电流和电压也越来越小，而 ...

写完上篇文章“为何Layout时信号走线要先过ESD/TVS管”，我又网上查了查资料，发现TI有一篇文档《ESD保护布局指南》，其对于 ...

As the popularity of portable electronics, “smart devices”, and automotive electronics keeps increasing, so does the need for analog functions to be embedded in ICs. This drives the demand for ...

GISTEL, Belgium-- September 29, 2008-- Sarnoff Europe today announced that it has expanded its TakeCharge® Electrostatic Discharge (ESD) IP portfolio with silicon-proven solutions for the TSMC 40nm G ...

Advanced CMOS process technologies enable IC designers to deliver higher performing devices, but also increase the need for extra board-level ESD protection to ensure the reliability of the end ...

AUSTIN, Texas--(BUSINESS WIRE)--The Silicon Integration Initiative Compact Model Coalition is proud to announce the release of the ASM-ESD diode model, a new electrostatic discharge compact modeling ...

Fig 1. A typical CMOS input circuit comprises a “P” and “N” transistor. One is fully “on” for logic high, and the other is “on” for a logic low. Fig 2. When a CMOS input pin is at logic high or low ...

An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device ...

San Jose, Calif. – May 10, 2010 – Apache Design Solutions, the technology leader in power integrity and noise closure for chip-package-systems (CPS) convergence, today announced PathFinder™, a ...

“This paper analyzes TCAD ESD simulation for both HBM zapping using real-world HBM ESD waveforms as stimuli and TLP testing using square wave TLP pulse trains as stimuli. It concludes that TCAD ESD ...

We all have hands on experience with electrostatic discharge (ESD), even if it’s just from walking across a carpet and touching something metal, releasing static electricity buildup in one brief ...

•ESD protectors with low dynamic resistance won’t necessarily protect circuits. •Most damage is caused within the first nanosecond of an ESD event. •The ESD protector should set as close as possible ...