Abstract: We report on four-input NAND and NOR gates using only two 7nm Schottky-Barrier (SB) independent-gate FinFETs transistors that take advantage of gate workfunction engineering (WFE). Careful ...

Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...