Abstract: We report germanium (Ge) doping in tin oxide (SnO2), which led to achieving a record ON–OFF current ratio of ~109 and a subthreshold slope (SS) of 77 mV/decade in a bottom-gated n-type ...

Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China Department of Chemical Engineering, Shanghai ...

Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, and Singapore-MIT Alliance, National University of Singapore, 4 ...